Created with Silicon Carbide (SiC) technology and leading-edge package design, the SA111 is expanding the boundaries of thermal efficiency and power density in integrated power modules. In a surface mount package and with a body of just 20mm x 20mm, the SA111 can provide continuous output currents of 32 A*, manage supply voltages of up to 650 V, and achieve switching frequencies of up to 1MHz. This integrated power module’s thermally efficient, surface-mount package utilizes top-side heat sinking, allowing the user to maximize board layout. The SA111’s Silicon Carbide MOSFETs enable the device to withstand higher thermal stress, managing junction temperatures of up to 175°C. The SA111 SiC power module offers a fully integrated solution allowing for increased device control and protection, featuring an integrated gate driver, under-voltage lockout, and active Miller clamping.
With the surface mount-package style and exceptionally compact size, designers are afforded the ability to maximize board real estate, allowing for the use of multiple devices in circuit designs with high power requirements. A wide range of target applications for the SA111 integrated power module include MRI gradient coil-drive, magnetic bearings, motor drive, test equipment, server-fans, Power Factor Correction (PFC), and AC/DC and DC/DC converters.
*A-Grade Variant
